KEC khb7d0n80p1 f1 free download

File name khb7d0n80p1_f1.pdf

SEMICONDUCTOR KHB7D0N80P1/F1 N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=800V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.55 @VGS = 10V Qg(typ.)=51.5nC MAXIMUM RATING (Tc=25 ) RATING CHARACTERISTIC SYMBOL UNIT KHB7D0N80P1 KHB7D0N80F1 Drain-Source Voltage VDSS 800 V KHB7D0N80F1 Gate-Source Voltage VGSS 30 V @TC=25 ID 7.0 7.0* Drain Current A Pulsed (Note1) IDP 28 28* Single Pulsed Avalanche Energy EAS 580 mJ (Note 2) Repetitive Avalanche Energy EAR 16.7 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) Drain Power Tc=25 167 56 W PD Dissipation Derate above25 1.33 0.44 W/ Maximum Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 0.75 2.25 /W Thermal Resistance, Junction-to- RthJA 62.5 62.5 /W Ambient * : Drain current limited by maximum junction temperature. 2007. 3. 26 Revision No : 1 1/7 KHB7D0N80P1/F1 ELECTRICAL CHARACTERISTICS (Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 800 - - V Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.93 - V/ Gate Threshold Voltage